TY - JOUR
T1 - Crystal structure and dielectric characterization of a (SrTiO 3/BaTiO3) n multilayer film prepared by radio frequency magnetron sputtering
AU - Li, Wang Long
AU - Lin, Huey Jiuan
AU - Hsiao, Fu Yuan
AU - Wu, Nan Chung
AU - Wang, Moo Chin
N1 - Funding Information:
This work was supported by the National Science Council (Taiwan, Republic of China), under Contract Nos. NSC 89-2216-E-151-011 and NSC 97-2221-E-006-223, which are grateful acknowledged. Help with experimental work and suggestions from Professors M.P. Hung and M.H. Hon, Ms. L.J. Wang, and Mr. J.M. Chen are deeply appreciated.
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/5
Y1 - 2010/5
N2 - (SrTiO3/BaTiO3) n multilayer films with Pt bottom and top electrodes have been prepared by a double target radio frequency (RF) magnetron sputtering, and their dielectric properties have been characterized as a function of temperature, frequency, bias voltage, and applied voltage. The X-ray diffraction (XRD) pattern reveals that the deposited (SrTiO3/BaTiO3) n multilayer films have a designed modulation. The interfaces within the multilayer films appear smooth and dense without any microcracks, and the adhesion is very good. The dielectric constant of the (SrTiO3/BaTiO3) n multilayer film increases with increasing layer number (n), and the leakage current density is less than 1 × 10-8 A•cm-2 for the applied voltage less than 5 V for the 450-nm-thick (SrTiO3/BaTiO3) n multilayer films. The remanent polarization (P r) and the coercive field (E c) of the 350-nm-thick (SrTiO 3/BaTiO3)4 multilayer films are 7 μC•cm-2 and 60 kV•cm-1, respectively, exhibiting ferroelectricity. (SrTiO3/BaTiO3)4 multilayer films have a high E c and a lower P r, as compared with the bulk BaTiO3 single crystal. The 450-nm-thick (SrTiO3/BaTiO3)4 multilayer films have a leakage current density-voltage characteristic, which makes them suitable for application in DRAMs capacitors.
AB - (SrTiO3/BaTiO3) n multilayer films with Pt bottom and top electrodes have been prepared by a double target radio frequency (RF) magnetron sputtering, and their dielectric properties have been characterized as a function of temperature, frequency, bias voltage, and applied voltage. The X-ray diffraction (XRD) pattern reveals that the deposited (SrTiO3/BaTiO3) n multilayer films have a designed modulation. The interfaces within the multilayer films appear smooth and dense without any microcracks, and the adhesion is very good. The dielectric constant of the (SrTiO3/BaTiO3) n multilayer film increases with increasing layer number (n), and the leakage current density is less than 1 × 10-8 A•cm-2 for the applied voltage less than 5 V for the 450-nm-thick (SrTiO3/BaTiO3) n multilayer films. The remanent polarization (P r) and the coercive field (E c) of the 350-nm-thick (SrTiO 3/BaTiO3)4 multilayer films are 7 μC•cm-2 and 60 kV•cm-1, respectively, exhibiting ferroelectricity. (SrTiO3/BaTiO3)4 multilayer films have a high E c and a lower P r, as compared with the bulk BaTiO3 single crystal. The 450-nm-thick (SrTiO3/BaTiO3)4 multilayer films have a leakage current density-voltage characteristic, which makes them suitable for application in DRAMs capacitors.
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U2 - 10.1007/s11661-010-0174-x
DO - 10.1007/s11661-010-0174-x
M3 - Article
AN - SCOPUS:77952428630
VL - 41
SP - 1330
EP - 1337
JO - Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science
JF - Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science
SN - 1073-5623
IS - 5
ER -