CuO-nanowire field emitter prepared on glass substrate

H. T. Hsueh, T. J. Hsueh, S. J. Chang, T. Y. Tsai, F. Y. Hung, S. P. Chang, W. Y. Weng, B. T. Dai

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16 引文 斯高帕斯(Scopus)

摘要

This study reports the growth of CuO nanowires (NWs) on glass substrate, and the fabrication of CuO-NW field emitter. Using CuO as the adhesion layer, we successfully grew CuO NWs of 2.5 μm average length and 70 nm average diameter by thermal annealing at 450°C for 5 h in air. It was found that turn-ON field of the fabricated field emitters was 4.5 V/m. It was also found that the field enhancement factor β of the fabricated CuO-NW field emitter was 1610.

原文English
文章編號5724303
頁(從 - 到)1161-1165
頁數5
期刊IEEE Transactions on Nanotechnology
10
發行號5
DOIs
出版狀態Published - 2011 9月

All Science Journal Classification (ASJC) codes

  • 電腦科學應用
  • 電氣與電子工程

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