We report the results of the current-assisted magnetization switching in submicron permalloy S-shape wires with narrow junctions (or notches). Domain walls were initially formed and pinned in the vicinity of the notches. Two distinct behaviors are observed in the current-assisted magnetization reversal process. When the applied field is near switching field (ΔH<7 Oe), the injected current directly switched the wire magnetization, and the needed critical current varied linearly and significantly with the field intensity. In contrast, when the field is relatively far from the switching field (ΔH>7 Oe), the current only moves the domain wall to a local stable state, and the critical current varied slightly with the field. Moreover, two resistance jumps during current scanning are observed in the cases with magnetization reversals. These results reveal that the current driven effect is closely related to the initial domain states, and are explained by a theoretical model based on spin transfer effect.
All Science Journal Classification (ASJC) codes
- 物理與天文學 (全部)