Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs

Hou Kuei Huang, Cieh Pin Chang, Mau Phon Houng, Yeong Her Wang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.

原文English
頁(從 - 到)2038-2043
頁數6
期刊Microelectronics Reliability
46
發行號12
DOIs
出版狀態Published - 2006 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 安全、風險、可靠性和品質
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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