摘要
Instabilities of the current in the negative differential resistance region of a resonant tunneling diode are studied as a function of the external circuit parameters. The instabilities are manifested as an excitation of the current oscillations in the circuit. To describe the instabilities, different equivalent circuit models assuming homogeneous current distribution in the diode are considered. It is shown that certain features in our measurements cannot be described using these models. This indicates the existence of current inhomogeneity effects in the diode.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 77-92 |
| 頁數 | 16 |
| 期刊 | Physics of Low-Dimensional Structures |
| 卷 | 2001 |
| 發行號 | 7-8 |
| 出版狀態 | Published - 2001 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 凝聚態物理學
- 物理與天文學（雜項）