Current Instabilities in the Negative Differential Resistance Region of a Large Area Resonant Tunneling Diode

V. G. Popov, Yu V. Dubrovskii, L. Eaves, J. C. Maan, K. L. Wang

研究成果: Article同行評審

摘要

Instabilities of the current in the negative differential resistance region of a resonant tunneling diode are studied as a function of the external circuit parameters. The instabilities are manifested as an excitation of the current oscillations in the circuit. To describe the instabilities, different equivalent circuit models assuming homogeneous current distribution in the diode are considered. It is shown that certain features in our measurements cannot be described using these models. This indicates the existence of current inhomogeneity effects in the diode.

原文English
頁(從 - 到)77-92
頁數16
期刊Physics of Low-Dimensional Structures
2001
發行號7-8
出版狀態Published - 2001

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 物理與天文學(雜項)

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