Cyclic voltammetric study and nucleation of electrodeposited Cu(In,Al)Se2 Thin Films with Sodium Dodecyl Sulfate Additive

Kuo Chan Huang, Chien Lin Liu, Pin Kun Hung, Mau-phon Houng

研究成果: Article

8 引文 (Scopus)

摘要

Cu(In,Al)Se2 films have been fabricated by electrodeposition technique in chloride solutions with sodium dodecyl sulfate (SDS) additive. The effects of SDS additive on the reduction potentials of Cu2+, In 3+, Al3+ and H2SeO3 were studied by cyclic voltammerty. The corresponding chemical reactions were defined according to the XRD analysis. SDS additive promotes the deposited potential of each element closing to each other for a better co-elecorodeposition environment. Besides, the chemical mechanism of Cu(In,Al)Se2 films were investigated by chronoamperometry. The nucleation mechanism of Cu(In,Al)Se 2 films change from instantaneous nucleation to progressive nucleation as SDS additive is added. Scanning electron microscopy and energy dispersive X-ray spectroscopy reveal the surface morphology and stoichiometry of Cu(In,Al)Se2 films at various potentials from -0.5 V to -1.0 V. The excess indium content inhibits the aluminum's incorporation into Cu(In,Al)Se2 films, and induces the surface morphology to change from round-like structure into cauliflower-like structure. Raman spectra shows the quality and composition phase of Cu(In,Al)Se2 films at various potentials. The shift in the optical band gap evidences the incorporation of aluminum element into CuInSe2 structure to form Cu(In,Al)Se 2 film. The corresponding optical bandgap of Cu(In,Al)Se2 film with the composition Al/(In+Al) = 0.219 is about 1.17 eV.

原文English
期刊Journal of the Electrochemical Society
160
發行號4
DOIs
出版狀態Published - 2013

指紋

Sodium dodecyl sulfate
sodium sulfates
Sodium Dodecyl Sulfate
Nucleation
nucleation
Thin films
thin films
Optical band gaps
Aluminum
Surface morphology
aluminum
Chronoamperometry
Indium
closing
Phase composition
Electrodeposition
electrodeposition
Chemical elements
Stoichiometry
indium

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

引用此文

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abstract = "Cu(In,Al)Se2 films have been fabricated by electrodeposition technique in chloride solutions with sodium dodecyl sulfate (SDS) additive. The effects of SDS additive on the reduction potentials of Cu2+, In 3+, Al3+ and H2SeO3 were studied by cyclic voltammerty. The corresponding chemical reactions were defined according to the XRD analysis. SDS additive promotes the deposited potential of each element closing to each other for a better co-elecorodeposition environment. Besides, the chemical mechanism of Cu(In,Al)Se2 films were investigated by chronoamperometry. The nucleation mechanism of Cu(In,Al)Se 2 films change from instantaneous nucleation to progressive nucleation as SDS additive is added. Scanning electron microscopy and energy dispersive X-ray spectroscopy reveal the surface morphology and stoichiometry of Cu(In,Al)Se2 films at various potentials from -0.5 V to -1.0 V. The excess indium content inhibits the aluminum's incorporation into Cu(In,Al)Se2 films, and induces the surface morphology to change from round-like structure into cauliflower-like structure. Raman spectra shows the quality and composition phase of Cu(In,Al)Se2 films at various potentials. The shift in the optical band gap evidences the incorporation of aluminum element into CuInSe2 structure to form Cu(In,Al)Se 2 film. The corresponding optical bandgap of Cu(In,Al)Se2 film with the composition Al/(In+Al) = 0.219 is about 1.17 eV.",
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T1 - Cyclic voltammetric study and nucleation of electrodeposited Cu(In,Al)Se2 Thin Films with Sodium Dodecyl Sulfate Additive

AU - Huang, Kuo Chan

AU - Liu, Chien Lin

AU - Hung, Pin Kun

AU - Houng, Mau-phon

PY - 2013

Y1 - 2013

N2 - Cu(In,Al)Se2 films have been fabricated by electrodeposition technique in chloride solutions with sodium dodecyl sulfate (SDS) additive. The effects of SDS additive on the reduction potentials of Cu2+, In 3+, Al3+ and H2SeO3 were studied by cyclic voltammerty. The corresponding chemical reactions were defined according to the XRD analysis. SDS additive promotes the deposited potential of each element closing to each other for a better co-elecorodeposition environment. Besides, the chemical mechanism of Cu(In,Al)Se2 films were investigated by chronoamperometry. The nucleation mechanism of Cu(In,Al)Se 2 films change from instantaneous nucleation to progressive nucleation as SDS additive is added. Scanning electron microscopy and energy dispersive X-ray spectroscopy reveal the surface morphology and stoichiometry of Cu(In,Al)Se2 films at various potentials from -0.5 V to -1.0 V. The excess indium content inhibits the aluminum's incorporation into Cu(In,Al)Se2 films, and induces the surface morphology to change from round-like structure into cauliflower-like structure. Raman spectra shows the quality and composition phase of Cu(In,Al)Se2 films at various potentials. The shift in the optical band gap evidences the incorporation of aluminum element into CuInSe2 structure to form Cu(In,Al)Se 2 film. The corresponding optical bandgap of Cu(In,Al)Se2 film with the composition Al/(In+Al) = 0.219 is about 1.17 eV.

AB - Cu(In,Al)Se2 films have been fabricated by electrodeposition technique in chloride solutions with sodium dodecyl sulfate (SDS) additive. The effects of SDS additive on the reduction potentials of Cu2+, In 3+, Al3+ and H2SeO3 were studied by cyclic voltammerty. The corresponding chemical reactions were defined according to the XRD analysis. SDS additive promotes the deposited potential of each element closing to each other for a better co-elecorodeposition environment. Besides, the chemical mechanism of Cu(In,Al)Se2 films were investigated by chronoamperometry. The nucleation mechanism of Cu(In,Al)Se 2 films change from instantaneous nucleation to progressive nucleation as SDS additive is added. Scanning electron microscopy and energy dispersive X-ray spectroscopy reveal the surface morphology and stoichiometry of Cu(In,Al)Se2 films at various potentials from -0.5 V to -1.0 V. The excess indium content inhibits the aluminum's incorporation into Cu(In,Al)Se2 films, and induces the surface morphology to change from round-like structure into cauliflower-like structure. Raman spectra shows the quality and composition phase of Cu(In,Al)Se2 films at various potentials. The shift in the optical band gap evidences the incorporation of aluminum element into CuInSe2 structure to form Cu(In,Al)Se 2 film. The corresponding optical bandgap of Cu(In,Al)Se2 film with the composition Al/(In+Al) = 0.219 is about 1.17 eV.

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