Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Hong Chih Chen, Ting Chang Chang, Wei Chih Lai, Guan Fu Chen, Bo Wei Chen, Yu Ju Hung, Kuo Jui Chang, Kai Chung Cheng, Chen Shuo Huang, Kuo Kuang Chen, Hsueh Hsing Lu, Yu Hsin Lin

研究成果: Article

3 引文 (Scopus)

摘要

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

原文English
頁(從 - 到)25866-25870
頁數5
期刊ACS Applied Materials and Interfaces
10
發行號31
DOIs
出版狀態Published - 2018 八月 8

指紋

Thin film transistors
Oxide films
Metals
Annealing
Zinc Oxide
Gallium
Indium
Zinc oxide
Lighting
Cooling
Fabrication

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

引用此文

Chen, Hong Chih ; Chang, Ting Chang ; Lai, Wei Chih ; Chen, Guan Fu ; Chen, Bo Wei ; Hung, Yu Ju ; Chang, Kuo Jui ; Cheng, Kai Chung ; Huang, Chen Shuo ; Chen, Kuo Kuang ; Lu, Hsueh Hsing ; Lin, Yu Hsin. / Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors. 於: ACS Applied Materials and Interfaces. 2018 ; 卷 10, 編號 31. 頁 25866-25870.
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abstract = "This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.",
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Chen, HC, Chang, TC, Lai, WC, Chen, GF, Chen, BW, Hung, YJ, Chang, KJ, Cheng, KC, Huang, CS, Chen, KK, Lu, HH & Lin, YH 2018, 'Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors', ACS Applied Materials and Interfaces, 卷 10, 編號 31, 頁 25866-25870. https://doi.org/10.1021/acsami.7b16307

Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors. / Chen, Hong Chih; Chang, Ting Chang; Lai, Wei Chih; Chen, Guan Fu; Chen, Bo Wei; Hung, Yu Ju; Chang, Kuo Jui; Cheng, Kai Chung; Huang, Chen Shuo; Chen, Kuo Kuang; Lu, Hsueh Hsing; Lin, Yu Hsin.

於: ACS Applied Materials and Interfaces, 卷 10, 編號 31, 08.08.2018, p. 25866-25870.

研究成果: Article

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AU - Chen, Hong Chih

AU - Chang, Ting Chang

AU - Lai, Wei Chih

AU - Chen, Guan Fu

AU - Chen, Bo Wei

AU - Hung, Yu Ju

AU - Chang, Kuo Jui

AU - Cheng, Kai Chung

AU - Huang, Chen Shuo

AU - Chen, Kuo Kuang

AU - Lu, Hsueh Hsing

AU - Lin, Yu Hsin

PY - 2018/8/8

Y1 - 2018/8/8

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