@article{51523569e343430e94331c3c70458457,
title = "Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors",
abstract = "This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.",
author = "Chen, {Hong Chih} and Chang, {Ting Chang} and Lai, {Wei Chih} and Chen, {Guan Fu} and Chen, {Bo Wei} and Hung, {Yu Ju} and Chang, {Kuo Jui} and Cheng, {Kai Chung} and Huang, {Chen Shuo} and Chen, {Kuo Kuang} and Lu, {Hsueh Hsing} and Lin, {Yu Hsin}",
note = "Funding Information: This work was performed at the National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pingtung area, and assisted with by the New Display Process Research Division, AU Optronics Co. and the Display Technology Center of Industrial Technology Research Institute. The authors acknowledge the financial support of the Ministry of Science and Technology, Taiwan (MOST) under Contract No. MOST-103-2112-M-110-011-MY3. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",
year = "2018",
month = aug,
day = "8",
doi = "10.1021/acsami.7b16307",
language = "English",
volume = "10",
pages = "25866--25870",
journal = "ACS Applied Materials and Interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "31",
}