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Decoherence induced by electron accumulation in a quantum measurement of charge qubits

  • Ming Tsung Lee
  • , Wei Min Zhang

研究成果: Article同行評審

8   連結會在新分頁中開啟 引文 斯高帕斯(Scopus)

摘要

In this paper, we study the quantum decoherence induced by accumulation of electron tunnelings during the quantum measurement of a charge qubit. The charge qubit is a single electron confined in coupled quantum dots. The measurement of the qubit states is performed using a quantum point contact. A set of master equations for qubit states is derived within a nonequilibrium perturbation to the equilibrium reservoir due to the electron accumulation between the source and drain of the quantum point contact. The quantum decoherence of the qubit states arose from the electron accumulation during the measurement is explored in this framework, and several interesting results on charge qubit decoherence are obtained.

原文English
文章編號085325
期刊Physical Review B - Condensed Matter and Materials Physics
74
發行號8
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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