Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

G. E. Rowlands, T. Rahman, J. A. Katine, J. Langer, A. Lyle, H. Zhao, J. G. Alzate, A. A. Kovalev, Y. Tserkovnyak, Z. M. Zeng, H. W. Jiang, K. Galatsis, Y. M. Huai, P. Khalili Amiri, K. L. Wang, I. N. Krivorotov, J. P. Wang

研究成果: Article同行評審

70 引文 斯高帕斯(Scopus)

摘要

We show that adding a perpendicular polarizer to a conventional spin torque memory element with an in-plane free layer and an in-plane polarizer can significantly increase the write speed and decrease the write energy of the element. We demonstrate the operation of such spin torque memory elements with write energies of 0.4 pJ and write times of 0.12 ns.

原文English
文章編號102509
期刊Applied Physics Letters
98
發行號10
DOIs
出版狀態Published - 2011 三月 7

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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