Deep trench isolation and inverted pyramid array structures used to enhance optical efficiency of photodiode in CMOS image sensor via simulations

Chang Fu Han, Jiun Ming Chiou, Jen Fin Lin

研究成果: Article

摘要

The photodiode in the backside-illuminated CMOS sensor is modeled to analyze the optical performances in a range of wavelengths (300–1100 nm). The effects of changing in the deep trench isolation depth (DTI) and pitch size (d) of the inverted pyramid array (IPA) on the peak value (OEmax.) of optical efficiency (OE) and its wavelength region are identified first. Then, the growth ratio (GR) is defined for the OE change in these wavelength ranges to highlight the effectiveness of various DTI and d combinations on the OEs and evaluate the OE difference between the pixel arrays with and without the DTI + IPA structures. Increasing DTI can bring in monotonous OEmax. increases in the entire wavelength region. For a fixed DTI, the maximum OEmax. is formed as the flat plane (d = 0 nm) is chosen for the top surface of Si photodiode in the RGB pixels operating at the visible light wavelengths; whereas different nonzero value is needed to obtain the maximum OEmax. for the RGB pixels operating in the near-infrared (NIR) region. The optimum choice in d for each color pixel and DTI depth can elevate the maximum GR value in the NIR region up to 82.2%.

原文English
文章編號3062
期刊Sensors (Switzerland)
20
發行號11
DOIs
出版狀態Published - 2020 六月 1

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Biochemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering

指紋 深入研究「Deep trench isolation and inverted pyramid array structures used to enhance optical efficiency of photodiode in CMOS image sensor via simulations」主題。共同形成了獨特的指紋。

  • 引用此