Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor

C. J. Chiu, S. S. Shih, Wen Yin Weng, Shoou Jinn Chang, Z. D. Hung, Tsung Ying Tsai

研究成果: Article

18 引文 (Scopus)

摘要

The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 -9 A to 7.97×10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 5 for the fabricated Ta 2O 5/a-ZITO TFT.

原文English
文章編號6179308
頁(從 - 到)1018-1020
頁數3
期刊IEEE Photonics Technology Letters
24
發行號12
DOIs
出版狀態Published - 2012 五月 22

指紋

Thin film transistors
Tin oxides
indium oxides
Indium
tin oxides
Oxide films
Zinc
Transistors
transistors
zinc
Thin films
Gate dielectrics
Carrier mobility
thin films
carrier mobility
Threshold voltage
Ultraviolet radiation
rejection
threshold voltage
Fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Chiu, C. J., Shih, S. S., Weng, W. Y., Chang, S. J., Hung, Z. D., & Tsai, T. Y. (2012). Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor. IEEE Photonics Technology Letters, 24(12), 1018-1020. [6179308]. https://doi.org/10.1109/LPT.2012.2193564
Chiu, C. J. ; Shih, S. S. ; Weng, Wen Yin ; Chang, Shoou Jinn ; Hung, Z. D. ; Tsai, Tsung Ying. / Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor. 於: IEEE Photonics Technology Letters. 2012 ; 卷 24, 編號 12. 頁 1018-1020.
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abstract = "The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 -9 A to 7.97×10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 5 for the fabricated Ta 2O 5/a-ZITO TFT.",
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Chiu, CJ, Shih, SS, Weng, WY, Chang, SJ, Hung, ZD & Tsai, TY 2012, 'Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor', IEEE Photonics Technology Letters, 卷 24, 編號 12, 6179308, 頁 1018-1020. https://doi.org/10.1109/LPT.2012.2193564

Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor. / Chiu, C. J.; Shih, S. S.; Weng, Wen Yin; Chang, Shoou Jinn; Hung, Z. D.; Tsai, Tsung Ying.

於: IEEE Photonics Technology Letters, 卷 24, 編號 12, 6179308, 22.05.2012, p. 1018-1020.

研究成果: Article

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AU - Chiu, C. J.

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AU - Hung, Z. D.

AU - Tsai, Tsung Ying

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