Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor

C. J. Chiu, S. S. Shih, Wen Yin Weng, Shoou Jinn Chang, Z. D. Hung, Tsung Ying Tsai

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 -9 A to 7.97×10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 5 for the fabricated Ta 2O 5/a-ZITO TFT.

原文English
文章編號6179308
頁(從 - 到)1018-1020
頁數3
期刊IEEE Photonics Technology Letters
24
發行號12
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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