TY - JOUR
T1 - Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor
AU - Chiu, C. J.
AU - Shih, S. S.
AU - Weng, Wen Yin
AU - Chang, Shoou Jinn
AU - Hung, Z. D.
AU - Tsai, Tsung Ying
N1 - Funding Information:
Manuscript received February 9, 2012; revised March 5, 2012; accepted March 28, 2012. Date of publication April 5, 2012; date of current version May 9, 2012. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, under Grant D97-2700.
PY - 2012
Y1 - 2012
N2 - The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 -9 A to 7.97×10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 5 for the fabricated Ta 2O 5/a-ZITO TFT.
AB - The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 -9 A to 7.97×10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 5 for the fabricated Ta 2O 5/a-ZITO TFT.
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U2 - 10.1109/LPT.2012.2193564
DO - 10.1109/LPT.2012.2193564
M3 - Article
AN - SCOPUS:84861139151
SN - 1041-1135
VL - 24
SP - 1018
EP - 1020
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 12
M1 - 6179308
ER -