Defect characterization by admittance spectroscopy techniques based on temperature-rate duality

Jian V. Li, Yanfa Yan, Aaron J. Ptak, Ingrid L. Repins, Dean H. Levi

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The behavior of charge trapping and detrapping by deep levels depends on both temperature and the rate at which the measurement (e.g., admittance spectroscopy) is conducted. We report recent advances in admittance spectroscopy based on the temperature-rate duality: the temperature derivative technique, and the 2D Arrhenius plot method. The first technique-temperature derivative admittance spectroscopy-can be used to directly determine the defect density of states just as the existing frequency derivative method, but it possesses certain key advantages. Within practical experimental limits, it allows a wider observation window of defect energies, avoiding possible detection failure, and facilitating simultaneous observation of multiple defects. For defect energies of most interest, it also yields more Arrhenius plot data points and therefore enables more accurate parameter extraction. In practice, the temperature derivative method can avoid system noise at low frequency and is more immune to baseline effects due to parasitic circuit effects. The second technique-the 2D Arrhenius plot method- can accurately and unambiguously solve the activation energy Ea, the pre-exponential factor ν0, and their temperature dependence, especially if the trapping/detrapping process is non-Arrhenius. The 2D Arrhenius plot method measures Ea and ν0 at any temperature from matching the first and second moments of the data calculated with respect to temperature and rate in the 2D temperature-rate plane. Defects in GaAsN and Cu(In,Ga)Se2 solar cells are used as case studies for the above techniques. The latter exhibits a temperature-dependent behavior of Ea and ν0 obeying the Meyer- Neldel's rule.

原文English
主出版物標題Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
頁面239-243
頁數5
DOIs
出版狀態Published - 2010
事件35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
持續時間: 2010 六月 202010 六月 25

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
國家/地區United States
城市Honolulu, HI
期間10-06-2010-06-25

All Science Journal Classification (ASJC) codes

  • 控制與系統工程
  • 工業與製造工程
  • 電氣與電子工程

指紋

深入研究「Defect characterization by admittance spectroscopy techniques based on temperature-rate duality」主題。共同形成了獨特的指紋。

引用此