Defect characterization by differential capacitance spectroscopy without the Arrhenius plot

研究成果: Comment/debate同行評審

摘要

A new method of Arrhenius transformation and matching is developed in this study based on the rate-temperature duality of the admittance spectroscopy measurement to extract the activation energy Ea and the attempt-to-escape frequency ν0 of a defect in GaAsN from differential capacitance spectroscopy without the Arrhenius plot and without identifying the fdC/df spectra peaks. The method consists of a set of variations that transform the iso-rate scan and/or the isothermal scan to a virtual space - activation energy, attempt-to-escape frequency, temperature, or rate. The transformed scans must be matched prior to extracting Ea and ν0 local to a fixed point in the two-dimensional temperature-rate experimental space.

原文English
文章編號043903
期刊Review of Scientific Instruments
92
發行號4
DOIs
出版狀態Published - 2021 四月 1

All Science Journal Classification (ASJC) codes

  • 儀器

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