The surface-defect distributions of electron-irradiated n-type silicon has been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution but not that of oxygen and other capture center's distribution. The vacancy diffusion length at 300°K was estimated to be about 3-6 μm.
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