Defect distribution near the surface of electron-irradiated silicon

K. L. Wang, Y. H. Lee, J. W. Corbett

研究成果: Article同行評審

48 引文 斯高帕斯(Scopus)

摘要

The surface-defect distributions of electron-irradiated n-type silicon has been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution but not that of oxygen and other capture center's distribution. The vacancy diffusion length at 300°K was estimated to be about 3-6 μm.

原文English
頁(從 - 到)547-548
頁數2
期刊Applied Physics Letters
33
發行號6
DOIs
出版狀態Published - 1978

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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