@article{0aed7311110b4e75b1c24b31d2b98de4,
title = "Defect Engineering in Ambipolar Layered Materials for Mode-Regulable Nociceptor",
abstract = "Defect engineering represents a significant approach for atomically thick 2D semiconductor material development to explore the unique material properties and functions. Doping-induced conversion of conductive polarity is particularly beneficial for optimizing the integration of layered electronics. Here, controllable doping behavior in palladium diselenide (PdSe2) transistor is demonstrated by manipulating its adatom-vacancy groups. The underlying mechanisms, which originate from reversible adsorption/desorption of oxygen clusters near selenide vacancy defects, are investigated systematically via their dynamic charge transfer characteristics and scanning tunneling microscope analysis. The modulated doping effect allows the PdSe2 transistor to emulate the essential characteristics of photo nociceptor on a device level, including firing signal threshold and sensitization. Interestingly, electrostatic gating, acting as a neuromodulator, can regulate the adaptive modes in nociceptor to improve its adaptability and perceptibility to handle different danger levels. An integrated artificial nociceptor array is also designed to execute unique image processing functions, which suggests a new perspective for extension of the promise of defect engineered 2D electronics in simplified sensory systems toward use in advanced humanoid robots and artificial visual sensors.",
author = "Mengjiao Li and Yang, {Feng Shou} and Hsu, {Hung Chang} and Chen, {Wan Hsin} and Kuo, {Chia Nung} and Chen, {Jiann Yeu} and Yang, {Shao Heng} and Yang, {Ting Hsun} and Lin, {Che Yi} and Yi Chou and Lee, {Mu Pai} and Chang, {Yuan Ming} and Yang, {Yung Cheng} and Lee, {Ko Chun} and Chou, {Yi Chia} and Lien, {Chen Hsin} and Lin, {Chun Liang} and Chiu, {Ya Ping} and Lue, {Chin Shan} and Lin, {Shu Ping} and Lin, {Yen Fu}",
note = "Funding Information: This work was financially supported by the Taiwan Ministry of Science and Technology (Grant Numbers MOST 109‐2634‐F‐009‐029, 109‐2112‐M‐005‐013‐MY3, and 109‐2221‐E‐005‐011) and the Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. The work was also financially supported by the “Center of Low‐Dimensional and Frontier Quantum Materials of National Chiao Tung University”, “Engineering in Agriculture Biotech Leadership (ENABLE) Center of National Chung Hsing University”, and the “Taichung Veteran General Hospital & National Chung Hsing University collaborative project (Grant Number TCVGH‐NCHU109DCA0100022). Funding Information: This work was financially supported by the Taiwan Ministry of Science and Technology (Grant Numbers MOST 109-2634-F-009-029, 109-2112-M-005-013-MY3, and 109-2221-E-005-011) and the Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. The work was also financially supported by the “Center of Low-Dimensional and Frontier Quantum Materials of National Chiao Tung University”, “Engineering in Agriculture Biotech Leadership (ENABLE) Center of National Chung Hsing University”, and the “Taichung Veteran General Hospital & National Chung Hsing University collaborative project (Grant Number TCVGH-NCHU109DCA0100022). Publisher Copyright: {\textcopyright} 2020 Wiley-VCH GmbH",
year = "2021",
month = jan,
day = "27",
doi = "10.1002/adfm.202007587",
language = "English",
volume = "31",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "5",
}