Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy

Wen Huei Chu, Hsin Wei Chiang, Chuan Pu Liu, Yi Feng Lai, Kuang Yuan Hsu, Hung Chin Chung

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

We report on negative differential resistance (NDR) from individual GaN nanowires prepared without catalysts by thermal chemical vapor deposition. Conductive atomic force microscopy was used to characterize the electron transport behavior and transmission electron microscopy was employed to characterize the microstructure of the GaN nanowires. The current-voltage curve exhibits two clear NDR regions in the forward bias. The defect assisted inelastic tunneling process resulting in the NDR behavior and the related mechanism for energy band diagram is proposed and discussed.

原文English
文章編號182101
期刊Applied Physics Letters
94
發行號18
DOIs
出版狀態Published - 2009

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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