Molecular Beam Epitaxy (MBE) is rapidly becoming a practical and economical epitaxy growth technology for opto-electronic and microwave devices. However, some morphologic defect problems such as whisker, oval defect and polycrystalline growth still remain to be solved. Simple precautions were used to eliminate the defect density.
|頁（從 - 到）||644-645|
|期刊||Electrochemical Society Extended Abstracts|
|出版狀態||Published - 1984|
All Science Journal Classification (ASJC) codes
- 工程 (全部)