DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE.

C. Y. Chang, K. Y. Cheng, Y. H. Wang, W. C. Liu, S. A. Liao

研究成果: Conference article同行評審

摘要

Molecular Beam Epitaxy (MBE) is rapidly becoming a practical and economical epitaxy growth technology for opto-electronic and microwave devices. However, some morphologic defect problems such as whisker, oval defect and polycrystalline growth still remain to be solved. Simple precautions were used to eliminate the defect density.

原文English
頁(從 - 到)644-645
頁數2
期刊Electrochemical Society Extended Abstracts
84-2
出版狀態Published - 1984

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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