Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2

R. R. Vanfleet; J. A. Simmons; H. P. Maruska; D. W. Hill; M. M.C. Chou; B. H. Chai

doi:10.1063/1.1599962

Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO₂

R. R. Vanfleet
, J. A. Simmons
, H. P. Maruska
, D. W. Hill
, M. M.C. Chou
, B. H. Chai

關鍵材料學位學程

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

摘要

The growth of free-standing wafers (50 mm diameter) of GaN by halide vapor phase epitaxy on lattice-matched γ-LiAlO₂ was discussed. The defects and defect densities in free-standing wafers were also studied by using transmission electron microscopy (TEM). The stacking faults in the basal plane were also reported.

原文	English
頁（從 - 到）	1139-1141
頁數	3
期刊	Applied Physics Letters
卷	83
發行號	6
DOIs	https://doi.org/10.1063/1.1599962
出版狀態	Published - 2003 8月 11

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.1599962

其它文件與鏈接

引用此

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AU - Hill, D. W.

AU - Chou, M. M.C.

AU - Chai, B. H.

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AB - The growth of free-standing wafers (50 mm diameter) of GaN by halide vapor phase epitaxy on lattice-matched γ-LiAlO2 was discussed. The defects and defect densities in free-standing wafers were also studied by using transmission electron microscopy (TEM). The stacking faults in the basal plane were also reported.

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Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此

Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO₂