Delaminated MnPS3 with Multiple Layers Coupled with Si Featuring Ultrahigh Detectivity and Environmental Stability for UV Photodetection

Chia Yun Chen, Tsung Yen Wu, Kuan Han Lin, Jheng Yi Li, Chia Nung Kuo, Chin Shan Lue

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Silicon (Si), the dominant semiconductor in microelectronics yet lacking optoelectronic functionalities in UV regions, has been researched extensively to make revolutionary changes. In this study, the inherent drawback of Si on optoelectronic functionalities in UV regions is potentially overcome through heterostructure coupling of delaminated p-type MnPS3, having bulk, multiple-layer, and few-layer features, with n-type Si. By artificially mimicking the architectures of shrubs with unique UV shading phenomena, the revolutionary multiple-layer MnPS3 structures with staggered stacking configurations trigger outstanding UV photosensing performances, displaying an average EQE value of 1.1 × 103%, average photoresponsivity of 3.1 × 102 A/W, average detectivity of 1.9 × 1014 cm Hz1/2W1−, and average on/off ratio of 1.8 × 103 under 365 nm light. To the best of our knowledge, this is the first attempt toward realizing gate-free MnPS3based UV photodetectors, while all of the photodetection outcomes are better than those of more sophisticated field-effect transistor (FET) designs, which have remarkable impacts on the practicality and functionality of next-generation UV optoelectronics.

原文English
頁(從 - 到)54643-54654
頁數12
期刊ACS Applied Materials and Interfaces
15
發行號47
DOIs
出版狀態Published - 2023

All Science Journal Classification (ASJC) codes

  • 一般材料科學

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