Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

Tian Li Wu; Yang Yan Tseng; Chih Fang Huang; Zih Sin Chen; Chih Chien Lin; Chung Jen Chung; Po Kai Huang; Kuo Hsing Kao

doi:10.1109/WiPDAAsia.2019.8760323

Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer

Tian Li Wu, Yang Yan Tseng, Chih Fang Huang, Zih Sin Chen, Chih Chien Lin, Chung Jen Chung, Po Kai Huang, Kuo Hsing Kao

研究成果: Conference contribution

2 引文斯高帕斯（Scopus）

摘要

In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al₂O₃ interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al₂O₃ layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al₂O₃ IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al₂O₃ IL is 10³ times higher the one without an Al₂O₃ IL. This proves that inserting an Al₂O₃ IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10^-4 Ω.cm² is demonstrated in the MIS contact with 1nm Al₂O₃ IL.

原文	English
主出版物標題	WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728121451
DOIs	https://doi.org/10.1109/WiPDAAsia.2019.8760323
出版狀態	Published - 2019 5月
事件	2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 - Taipei, Taiwan 持續時間: 2019 5月 23 → 2019 5月 25

出版系列

名字	WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference	2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019
國家/地區	Taiwan
城市	Taipei
期間	19-05-23 → 19-05-25

All Science Journal Classification (ASJC) codes

能源工程與電力技術
電氣與電子工程
電子、光磁材料

存取文件

10.1109/WiPDAAsia.2019.8760323

其它文件與鏈接

引用此

Wu, T. L., Tseng, Y. Y., Huang, C. F., Chen, Z. S., Lin, C. C., Chung, C. J., Huang, P. K., & Kao, K. H. (2019). Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. 於 WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 文章 8760323 (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2019.8760323

Wu, Tian Li ; Tseng, Yang Yan ; Huang, Chih Fang 等. / Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2019. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

@inproceedings{7bd66eeaf876489897a1812ec71a5f55,

title = "Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer",

abstract = "In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.",

author = "Wu, {Tian Li} and Tseng, {Yang Yan} and Huang, {Chih Fang} and Chen, {Zih Sin} and Lin, {Chih Chien} and Chung, {Chung Jen} and Huang, {Po Kai} and Kao, {Kuo Hsing}",

year = "2019",

month = may,

doi = "10.1109/WiPDAAsia.2019.8760323",

language = "English",

series = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

address = "United States",

note = "2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 ; Conference date: 23-05-2019 Through 25-05-2019",

}

Wu, TL, Tseng, YY, Huang, CF, Chen, ZS, Lin, CC, Chung, CJ, Huang, PK & Kao, KH 2019, Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. 於 WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia., 8760323, WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019, Taipei, Taiwan, 19-05-23. https://doi.org/10.1109/WiPDAAsia.2019.8760323

Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. / Wu, Tian Li; Tseng, Yang Yan; Huang, Chih Fang 等.
WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2019. 8760323 (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

研究成果: Conference contribution

TY - GEN

T1 - Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

AU - Wu, Tian Li

AU - Tseng, Yang Yan

AU - Huang, Chih Fang

AU - Chen, Zih Sin

AU - Lin, Chih Chien

AU - Chung, Chung Jen

AU - Huang, Po Kai

AU - Kao, Kuo Hsing

PY - 2019/5

Y1 - 2019/5

N2 - In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

AB - In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

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UR - http://www.scopus.com/inward/citedby.url?scp=85070313703&partnerID=8YFLogxK

U2 - 10.1109/WiPDAAsia.2019.8760323

DO - 10.1109/WiPDAAsia.2019.8760323

M3 - Conference contribution

T3 - WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

BT - WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019

Y2 - 23 May 2019 through 25 May 2019

ER -

Wu TL, Tseng YY, Huang CF, Chen ZS, Lin CC, Chung CJ 等. Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. 於 WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2019. 8760323. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). doi: 10.1109/WiPDAAsia.2019.8760323