Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

Tian Li Wu, Yang Yan Tseng, Chih Fang Huang, Zih Sin Chen, Chih Chien Lin, Chung Jen Chung, Po Kai Huang, Kuo Hsing Kao

研究成果: Conference contribution

摘要

In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

原文English
主出版物標題WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728121451
DOIs
出版狀態Published - 2019 五月
事件2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 - Taipei, Taiwan
持續時間: 2019 五月 232019 五月 25

出版系列

名字WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019
國家/地區Taiwan
城市Taipei
期間19-05-2319-05-25

All Science Journal Classification (ASJC) codes

  • 能源工程與電力技術
  • 電氣與電子工程
  • 電子、光磁材料

指紋

深入研究「Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al<sub>2</sub>o<sub>3</sub> interfacial layer」主題。共同形成了獨特的指紋。

引用此