Using the combination of carrier injection modulation (bipolar mode) and channel blocking effect (junction field-effect transistor mode), we demonstrate a three-terminal voltage-controllable negative differential resistance device with a high room-temperature peak-to-valley current ratio in an N-AlGaAs/p +-GaAs/n-GaAs structure. The third terminal is formed through a self-aligned p-type diffused ohmic contact process to the n-GaAs layer instead of the p+-GaAs layer. The structure can be viewed as a modified integration circuit of a bipolar transistor and a junction field-effect transistor.
|頁（從 - 到）||7990-7992|
|期刊||Journal of Applied Physics|
|出版狀態||Published - 1993 12月 1|
All Science Journal Classification (ASJC) codes
- 物理與天文學 (全部)