Demonstration of high peak-to-valley current ratio in an N-p-n AlGaAs/GaAs structure

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

Using the combination of carrier injection modulation (bipolar mode) and channel blocking effect (junction field-effect transistor mode), we demonstrate a three-terminal voltage-controllable negative differential resistance device with a high room-temperature peak-to-valley current ratio in an N-AlGaAs/p +-GaAs/n-GaAs structure. The third terminal is formed through a self-aligned p-type diffused ohmic contact process to the n-GaAs layer instead of the p+-GaAs layer. The structure can be viewed as a modified integration circuit of a bipolar transistor and a junction field-effect transistor.

原文English
頁(從 - 到)7990-7992
頁數3
期刊Journal of Applied Physics
73
發行號11
DOIs
出版狀態Published - 1993 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

指紋 深入研究「Demonstration of high peak-to-valley current ratio in an N-p-n AlGaAs/GaAs structure」主題。共同形成了獨特的指紋。

  • 引用此