Demonstration of Si homojunction far-infrared detectors

A. G.U. Perera; W. Z. Shen; H. C. Liu; M. Buchanan; M. O. Tanner; K. L. Wang

doi:10.1063/1.121344

Demonstration of Si homojunction far-infrared detectors

A. G.U. Perera, W. Z. Shen, H. C. Liu, M. Buchanan, M. O. Tanner, K. L. Wang

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摘要

A 48 μm cutoff wavelength (λ_c) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p⁺ emitter layers and intrinsic layers) is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3±0.1 A/W at 27.5 μm and detectivity D^* of 6.6×10¹⁰ cm Hz /W. The λ_c and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40-200 μm) with high performance and tailorable λ_cs can be realized using higher emitter layer doping concentrations.

原文	English
頁（從 - 到）	2307-2309
頁數	3
期刊	Applied Physics Letters
卷	72
發行號	18
DOIs	https://doi.org/10.1063/1.121344
出版狀態	Published - 1998

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.121344

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@article{2cd5b12567d640faadac28fd28671ffe,

title = "Demonstration of Si homojunction far-infrared detectors",

abstract = "A 48 μm cutoff wavelength (λc) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p+ emitter layers and intrinsic layers) is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3±0.1 A/W at 27.5 μm and detectivity D* of 6.6×1010 cm Hz /W. The λc and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40-200 μm) with high performance and tailorable λcs can be realized using higher emitter layer doping concentrations.",

author = "Perera, {A. G.U.} and Shen, {W. Z.} and Liu, {H. C.} and M. Buchanan and Tanner, {M. O.} and Wang, {K. L.}",

year = "1998",

doi = "10.1063/1.121344",

language = "English",

volume = "72",

pages = "2307--2309",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Demonstration of Si homojunction far-infrared detectors

AU - Perera, A. G.U.

AU - Shen, W. Z.

AU - Liu, H. C.

AU - Buchanan, M.

AU - Tanner, M. O.

AU - Wang, K. L.

PY - 1998

Y1 - 1998

N2 - A 48 μm cutoff wavelength (λc) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p+ emitter layers and intrinsic layers) is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3±0.1 A/W at 27.5 μm and detectivity D* of 6.6×1010 cm Hz /W. The λc and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40-200 μm) with high performance and tailorable λcs can be realized using higher emitter layer doping concentrations.

AB - A 48 μm cutoff wavelength (λc) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p+ emitter layers and intrinsic layers) is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3±0.1 A/W at 27.5 μm and detectivity D* of 6.6×1010 cm Hz /W. The λc and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40-200 μm) with high performance and tailorable λcs can be realized using higher emitter layer doping concentrations.

UR - http://www.scopus.com/inward/record.url?scp=0001417267&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001417267&partnerID=8YFLogxK

U2 - 10.1063/1.121344

DO - 10.1063/1.121344

M3 - Article

AN - SCOPUS:0001417267

SN - 0003-6951

VL - 72

SP - 2307

EP - 2309

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Demonstration of Si homojunction far-infrared detectors

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