Demonstration of Si homojunction far-infrared detectors

A. G.U. Perera, W. Z. Shen, H. C. Liu, M. Buchanan, M. O. Tanner, K. L. Wang

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

A 48 μm cutoff wavelength (λc) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p+ emitter layers and intrinsic layers) is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3±0.1 A/W at 27.5 μm and detectivity D* of 6.6×1010 cm Hz /W. The λc and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40-200 μm) with high performance and tailorable λcs can be realized using higher emitter layer doping concentrations.

原文English
頁(從 - 到)2307-2309
頁數3
期刊Applied Physics Letters
72
發行號18
DOIs
出版狀態Published - 1998

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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