Dependence of Cu/Ta-N/Ta metallization stability on the characteristics of low dielectric constant materials

Ching Chun Chang, Shiu Ko JangJian, J. S. Chen

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

In this work, stability of the Cu/Ta-N/Ta/low-k material multilayers deposited on Si substrate was explored. The as-deposited Ta-N diffusion barriers are amorphous TaNx (x ∼ 0.5) or polycrystalline TaN, whereas low-k materials include fluorinated silicate glass (FSG) and organosilicate glass (OSG). The thermal stability of the multilayers was assessed by annealing in vacuum at 400°C for 30 or 60 min. After annealing, bubblelike topography was observed on the surfaces of the Cu/Ta-N/Ta multilayers deposited on FSG but not seen for the multilayers deposited on OSG. In addition, the blister size of samples with TaNx barrier was larger than that of samples with TaN barrier. The bubbles expanded in size with increasing duration of thermal annealing, especially for the samples with TaNx barriers. Poor adhesion between the annealed Cu/Ta-N/Ta multilayers and FSG was revealed by a tape test. Meanwhile, the test showed that the Cu/Ta-N/Ta multilayers deposited on OSG possess superior adhesion strength. The result can be attributed to the serious outgassing of FSG. The connection between the variation of sheet resistances and the interactions in the Cu/Ta-N/Ta/dielectrics multilayer structures upon annealing is discussed.

原文English
頁(從 - 到)G517-G521
期刊Journal of the Electrochemical Society
152
發行號7
DOIs
出版狀態Published - 2005

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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