@article{85541a7fbcef4c73b33ea9851b11201b,
title = "Dependence of DC parameters on layout and low-frequency noise behavior in strained-si nMOSFETs fabricated by stress-memorization technique",
abstract = "The impact of stress-memorization technique (SMT)-induced tensile strain on the layout dependence of nMOSFET characteristics is investigated. It is found that the incorporation of the SMT process provides up to 12% improvement in transconductance and 9% enhancement in on-state current for nMOSFETs with a source/drain length (LS/D) of 1.76 μmand W = 0.5. The characteristics of the SMT device become more sensitive to the layout geometry as LS/D and W are down to 0.5 and 0.25 μm, respectively. Moreover, low-frequency measurements reveal that the interface quality of the SMT device is the same as that of the control devices. Furthermore, it is found that the mechanism of 1 noise in the SMT device can be properly interpreted by the unified model.",
author = "Huang, {Yao Tsung} and Wu, {San Lein} and Chang, {Shoou Jinn} and Kuo, {Cheng Wen} and Chen, {Ya Ting} and Cheng, {Yao Chin} and Osbert Cheng",
note = "Funding Information: Financial support from the Bureau of Energy, Ministry of Economic Affairs of Taiwan is appreciated. The authors sincerely thank the LED Lighting and Research Center, NCKU for assistance in devices analysis. Funding Information: Manuscript received January 13, 2010; revised February 11, 2010. Date of publication March 29, 2010; date of current version April 23, 2010. This work was supported in part by the National Science Council of Taiwan under Contract NSC 97-2215-E-230-021, by the Center for Frontier Materials and Micro/ Nano Science and Technology, National Cheng Kung University, Tainan City, Taiwan, under Grant D97-2700, by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, and by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Grant 98-D0204-6. The review of this letter was arranged by Editor M. Ostling.",
year = "2010",
month = may,
doi = "10.1109/LED.2010.2044477",
language = "English",
volume = "31",
pages = "500--502",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}