Dependence of tunneling current on structural variations of superlattice devices

B. Jogai, K. L. Wang

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

The tunneling current of a three-terminal, double-barrier superlattice device has been calculated by solving the Schrödinger equation. The results indicate that the negative resistance resulting from resonant tunneling can be adjusted by varying the bias voltages. Use of multiple barriers has been explored. In particular, we have examined the effect on the tunneling current of asymmetric wells and barrier heights. Deviations from perfect symmetry are seen to produce radical changes in the results. The detailed features of the I-V curve could be used to probe the superlattice structure.

原文English
頁(從 - 到)167-168
頁數2
期刊Applied Physics Letters
46
發行號2
DOIs
出版狀態Published - 1985

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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