Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP

C. T. Lee, Y. K. Su, S. L. Chen

研究成果: Article

25 引文 斯高帕斯(Scopus)

摘要

To compensate the piezoelectrical properties of InP-based material for the applications of monolithic acousto-optic devices and systems, a high quality ZnO film with a highly preferred orientation and fine structure should be deposited onto on InP substrate. The dependence of the quality of ZnO films on RF sputtering parameters was investigated. The optimal deposition conditions are obtained as substrate temperature of 250°C, sputtering power of 350 W, and oxygen content of 20 vol%. A SAW device with center frequency of 105 MHz fabricated on the ZnO/InP was demonstrated.

原文English
頁(從 - 到)785-789
頁數5
期刊Journal of Crystal Growth
96
發行號4
DOIs
出版狀態Published - 1989 八月

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

指紋 深入研究「Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP」主題。共同形成了獨特的指紋。

  • 引用此