A selective oxidation process by using metal as the mask is proposed to fabricate the n-channel depletion-mode GaAs MOSFET with liquid phase chemical-enhanced oxidation method at low temperature. Metals are deposited firstly for source and drain and then used as the mask for growing gate oxide and side-wall passivation, simultaneously. The proposed selective oxidation process can simplify one mask process to fabricate GaAs MOSFET and achieve more reliable oxide layers. The fabricated 2μm gate-length GaAs MOSFET shows the transconductance larger than 75 mS/mm with a selective grown gate oxide thickness of 35 nm. In addition, the microwave characteristics of short-circuit current gain cutoff frequency FT and a maximum oscillation frequency fmax have also been demonstrated, respectively.
|出版狀態||Published - 2000 十二月 1|
|事件||27th International Symposium on Compound Semiconductors - Monterey, CA, United States|
持續時間: 2000 十月 2 → 2000 十月 5
|Other||27th International Symposium on Compound Semiconductors|
|期間||00-10-02 → 00-10-05|
All Science Journal Classification (ASJC) codes