Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

J. Y. Wu, H. H. Wang, P. W. Sze, Y. H. Wang, M. P. Houng

研究成果: Paper

摘要

A selective oxidation process by using metal as the mask is proposed to fabricate the n-channel depletion-mode GaAs MOSFET with liquid phase chemical-enhanced oxidation method at low temperature. Metals are deposited firstly for source and drain and then used as the mask for growing gate oxide and side-wall passivation, simultaneously. The proposed selective oxidation process can simplify one mask process to fabricate GaAs MOSFET and achieve more reliable oxide layers. The fabricated 2μm gate-length GaAs MOSFET shows the transconductance larger than 75 mS/mm with a selective grown gate oxide thickness of 35 nm. In addition, the microwave characteristics of short-circuit current gain cutoff frequency FT and a maximum oscillation frequency fmax have also been demonstrated, respectively.

原文English
頁面149-154
頁數6
出版狀態Published - 2000 十二月 1
事件27th International Symposium on Compound Semiconductors - Monterey, CA, United States
持續時間: 2000 十月 22000 十月 5

Other

Other27th International Symposium on Compound Semiconductors
國家United States
城市Monterey, CA
期間00-10-0200-10-05

    指紋

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此

Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y. H., & Houng, M. P. (2000). Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate. 149-154. 論文發表於 27th International Symposium on Compound Semiconductors, Monterey, CA, United States.