Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

J. Y. Wu; H. H. Wang; P. W. Sze; Y. H. Wang; M. P. Houng

Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

J. Y. Wu, H. H. Wang, P. W. Sze, Y. H. Wang, M. P. Houng

研究成果: Paper › 同行評審

摘要

A selective oxidation process by using metal as the mask is proposed to fabricate the n-channel depletion-mode GaAs MOSFET with liquid phase chemical-enhanced oxidation method at low temperature. Metals are deposited firstly for source and drain and then used as the mask for growing gate oxide and side-wall passivation, simultaneously. The proposed selective oxidation process can simplify one mask process to fabricate GaAs MOSFET and achieve more reliable oxide layers. The fabricated 2μm gate-length GaAs MOSFET shows the transconductance larger than 75 mS/mm with a selective grown gate oxide thickness of 35 nm. In addition, the microwave characteristics of short-circuit current gain cutoff frequency F_T and a maximum oscillation frequency f_max have also been demonstrated, respectively.

原文	English
頁面	149-154
頁數	6
出版狀態	Published - 2000
事件	27th International Symposium on Compound Semiconductors - Monterey, CA, United States 持續時間: 2000 10月 2 → 2000 10月 5

Other

Other	27th International Symposium on Compound Semiconductors
國家/地區	United States
城市	Monterey, CA
期間	00-10-02 → 00-10-05

All Science Journal Classification (ASJC) codes

一般工程

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title = "Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate",

abstract = "A selective oxidation process by using metal as the mask is proposed to fabricate the n-channel depletion-mode GaAs MOSFET with liquid phase chemical-enhanced oxidation method at low temperature. Metals are deposited firstly for source and drain and then used as the mask for growing gate oxide and side-wall passivation, simultaneously. The proposed selective oxidation process can simplify one mask process to fabricate GaAs MOSFET and achieve more reliable oxide layers. The fabricated 2μm gate-length GaAs MOSFET shows the transconductance larger than 75 mS/mm with a selective grown gate oxide thickness of 35 nm. In addition, the microwave characteristics of short-circuit current gain cutoff frequency FT and a maximum oscillation frequency fmax have also been demonstrated, respectively.",

author = "Wu, {J. Y.} and Wang, {H. H.} and Sze, {P. W.} and Wang, {Y. H.} and Houng, {M. P.}",

year = "2000",

language = "English",

pages = "149--154",

note = "27th International Symposium on Compound Semiconductors ; Conference date: 02-10-2000 Through 05-10-2000",

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TY - CONF

T1 - Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

AU - Wu, J. Y.

AU - Wang, H. H.

AU - Sze, P. W.

AU - Wang, Y. H.

AU - Houng, M. P.

PY - 2000

Y1 - 2000

N2 - A selective oxidation process by using metal as the mask is proposed to fabricate the n-channel depletion-mode GaAs MOSFET with liquid phase chemical-enhanced oxidation method at low temperature. Metals are deposited firstly for source and drain and then used as the mask for growing gate oxide and side-wall passivation, simultaneously. The proposed selective oxidation process can simplify one mask process to fabricate GaAs MOSFET and achieve more reliable oxide layers. The fabricated 2μm gate-length GaAs MOSFET shows the transconductance larger than 75 mS/mm with a selective grown gate oxide thickness of 35 nm. In addition, the microwave characteristics of short-circuit current gain cutoff frequency FT and a maximum oscillation frequency fmax have also been demonstrated, respectively.

AB - A selective oxidation process by using metal as the mask is proposed to fabricate the n-channel depletion-mode GaAs MOSFET with liquid phase chemical-enhanced oxidation method at low temperature. Metals are deposited firstly for source and drain and then used as the mask for growing gate oxide and side-wall passivation, simultaneously. The proposed selective oxidation process can simplify one mask process to fabricate GaAs MOSFET and achieve more reliable oxide layers. The fabricated 2μm gate-length GaAs MOSFET shows the transconductance larger than 75 mS/mm with a selective grown gate oxide thickness of 35 nm. In addition, the microwave characteristics of short-circuit current gain cutoff frequency FT and a maximum oscillation frequency fmax have also been demonstrated, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0034388533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034388533&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034388533

SP - 149

EP - 154

T2 - 27th International Symposium on Compound Semiconductors

Y2 - 2 October 2000 through 5 October 2000

ER -

Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

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