SiO2 insulating layers were deposited onto 4H-SiC substrates by photo-CVD technique. It was found that the limiting factor for the SiO2 growth rate could involve the density of SiH4 molecules available to form SiHx or the density of O2 molecules available to form excited O atoms. The leakage current was only 4.15X10-8 A/cm2 with an applied field of 4 MV/cm for the 500°C photo-CVD grown Al/SiO2/4H-SiC MIS capacitor.
|頁（從 - 到）||329-331|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 2003 一月|
All Science Journal Classification (ASJC) codes