Deposition of SiO2 layers on 4H-SiC by photochemical vapor deposition

Yu Zung Chiou, Chia Sheng Chang, Shoou Jinn Chang, Yan Kuin Su, Jung Ran Chiou, Bohr Ran Huang, Jone F. Chen

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

SiO2 insulating layers were deposited onto 4H-SiC substrates by photo-CVD technique. It was found that the limiting factor for the SiO2 growth rate could involve the density of SiH4 molecules available to form SiHx or the density of O2 molecules available to form excited O atoms. The leakage current was only 4.15X10-8 A/cm2 with an applied field of 4 MV/cm for the 500°C photo-CVD grown Al/SiO2/4H-SiC MIS capacitor.

原文English
頁(從 - 到)329-331
頁數3
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
發行號1 SPEC.
DOIs
出版狀態Published - 2003 一月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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