Deposition of SiO2 layers on GaN by photochemical vapor deposition

Shoou Jinn Chang, Yan Kuin Su, Yu Zung Chiou, Jung Ran Chiou, Bohr Ran Huang, Chia Sheng Chang, Jone F. Chen

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

SiO2 insulating layers were first deposited onto GaN by photochemical vapor deposition (photo-CVD) technology using a deuterium (D2) lamp as the excitation source. Physical, chemical, and electrical characteristics of the Al/SiO2/GaN metal-insulator-semiconductor (MIS) capacitors are reported for the first time. It was also found that the limiting factor of SiO2 growth rate was the number of SiH4 and O2 molecules available to provide excited Si and O atoms. Furthermore, it was found from high-frequency capacitance-voltage measurements that the photo-CVD SiO2/n-GaN interface state density, Dit, was estimated to be 8.4 × 1011 cm-2 eV-1 for the photo-CVD SiO2 layers prepared at 300°C. With an applied field of 4 MV/cm, the oxide leakage current density was found to be only 6.6 × 10-7 A/cm2.

原文English
頁(從 - 到)C77-C80
期刊Journal of the Electrochemical Society
150
發行號2
DOIs
出版狀態Published - 2003 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

指紋

深入研究「Deposition of SiO<sub>2</sub> layers on GaN by photochemical vapor deposition」主題。共同形成了獨特的指紋。

引用此