Deposition of ZrO2 film by liquid phase deposition

Jain Ming Lin, Ming chi Hsu, Kuan Zong Fung

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)


In this study, undoped ZrO2 thin films were deposited on single-crystal silicon substrates using liquid phase deposition. The undoped films were formed by hydrolysis of zirconium sulfate (Zr(SO4)2·4H2O) in the presence of H2O. A continuous oxide film was obtained by controlling adequate (NH4)2S2O8 concentration. The deposited films were characterized by SEM, FT-IR, XRD and DTA. Typically, the films showed excellent adhesion to the substrate with uniform particle diameter about 150 nm. The thicknesses of ZrO2 film were about 200 nm after 10 h deposition at 30 °C. These films shows single tetragonal phase after heat treated at 600 °C. High annealing temperature (e.g. 750 °C) may result in the phase transformation of (t)-ZrO2 into (m)-ZrO2.

頁(從 - 到)49-54
期刊Journal of Power Sources
發行號1 SPEC. ISS.
出版狀態Published - 2006 9月 13

All Science Journal Classification (ASJC) codes

  • 可再生能源、永續發展與環境
  • 能源工程與電力技術
  • 物理與理論化學
  • 電氣與電子工程


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