Design and fabrication of a novel crystal SiGeC far infrared sensor with wavelength 8-14 micrometer

Ming Chun Hsieh, Yean Kuen Fang, Pei Ming Wu, Chun Che Yang, Yu-Cheng Lin, Wen De Wang, Shyh Fann Ting, Jyh Jier Ho

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, we report the design, fabrication, and performance of a novel crystal SiGeC infrared sensor with wavelength 8-14 μm by bulk micromaching technology for portable far infrared ray (FIR) in rehabilitation system application. The working principle of the sensor is based on the change of thermistor's resistance under the irradiation FIR light. The thermistor in the IR detector is made of Si 0.68 Ge 0.31 C 0.01 thin films for its large activation energy of 0.21 ev and the temperature coefficient (TCR) of -2.74%, respectively. Finite element method package ANSYS has been employed for analyze of the thermal isolation and stress distribution in the IR detector. The dimension of the microbridge fabricated by anisotropic wet etching is 2000 × 2000 × 25 μm 3 . The developed FIR sensor exhibits the thermal conductance of 1.85 × 10 -5 WR -1 and the heat capacity as 7.4 × 10 -7 JK -1 under air ambient at room temperature. The responsivity is 523 VW -1 in the waveband 8-14 μm with nickel absorber under a bias voltage 1.5 V.

原文English
頁(從 - 到)360-365
頁數6
期刊IEEE Sensors Journal
2
發行號4
DOIs
出版狀態Published - 2002 十二月 1
對外發佈

All Science Journal Classification (ASJC) codes

  • 儀器
  • 電氣與電子工程

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