TY - JOUR
T1 - Design and Fabrication of a TiO2/SiO2 Dielectric Broadband and Wide-Angle Reflector and Its Application to GaN-Based Blue LEDs
AU - Lin, Nan Ming
AU - Shei, Shih Chang
AU - Chang, Shoou Jinn
PY - 2015/7/1
Y1 - 2015/7/1
N2 - In this paper, optical software and ion-assisted e-gun evaporation with radio frequency neutralizer were applied to simulate and fabricate a broadband reflector, respectively. It can almost reach 100% between 400 and 630 nm and between 400 and 580 nm with light incident angles of 5° and 45°, respectively. With 350-mA current injection, it was found that we achieved 34% enhancement in the GaN-based blue LEDs output power by the formation of a broadband reflector. Furthermore, it can be seen clearly that the optical microscopes images of the LEDs with an 11 pairs distrbuted Bragg reflector and with a broadband reflector were brighter than that of the LED without a reflector. The LED with a broadband reflector is the brightest of all LEDs. This result agrees with that observed in the current-output power characteristics.
AB - In this paper, optical software and ion-assisted e-gun evaporation with radio frequency neutralizer were applied to simulate and fabricate a broadband reflector, respectively. It can almost reach 100% between 400 and 630 nm and between 400 and 580 nm with light incident angles of 5° and 45°, respectively. With 350-mA current injection, it was found that we achieved 34% enhancement in the GaN-based blue LEDs output power by the formation of a broadband reflector. Furthermore, it can be seen clearly that the optical microscopes images of the LEDs with an 11 pairs distrbuted Bragg reflector and with a broadband reflector were brighter than that of the LED without a reflector. The LED with a broadband reflector is the brightest of all LEDs. This result agrees with that observed in the current-output power characteristics.
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U2 - 10.1109/JQE.2015.2439518
DO - 10.1109/JQE.2015.2439518
M3 - Article
SN - 0018-9197
VL - 51
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 7
M1 - 7122868
ER -