Design and Implementation of 1 MHz DC-DC LLC Resonant Converter with GaN Enhancement Mode HEMT

Chih Chia Lai, Tsorng Juu Liang, Wei Jing Tseng, Kai Hui Chen, Shi Quan Chen

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

Gallium Nitride power transistor is the power devices with fast switching characteristics. This feature allows the converters to reduce switching losses for operating at higher frequency. A 1 MHz LLC half bridge resonant converter with GaN enhancement mode HEMT (GaN E-HEMT) is implemented. The power density of the power converter is improved with higher switching frequency and achieve higher efficiency with soft switching technique. The operating principle of half bridge LLC resonant converter is discussed and the characteristics and gate driver circuit requirements of the wide bandgap devices are investigated. Finally, the digital signal processor, TMS320F28035, is used to realize the laboratory prototype with the input voltage 400 V, the output voltage 12 V, and rated output power 240W. The synchronous rectifier is used on the secondary side to reduce conduction loss to improve efficiency. The experimental results show that efficiency can be as high as 94.1% at 50% load and 92.1% at full load.

原文English
主出版物標題2022 IEEE 7th Southern Power Electronics Conference, SPEC 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350399882
DOIs
出版狀態Published - 2022
事件7th IEEE Southern Power Electronics Conference, SPEC 2022 - Nadi, Fiji
持續時間: 2022 12月 52022 12月 8

出版系列

名字2022 IEEE 7th Southern Power Electronics Conference, SPEC 2022

Conference

Conference7th IEEE Southern Power Electronics Conference, SPEC 2022
國家/地區Fiji
城市Nadi
期間22-12-0522-12-08

All Science Journal Classification (ASJC) codes

  • 電腦網路與通信
  • 能源工程與電力技術
  • 電氣與電子工程
  • 安全、風險、可靠性和品質

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