Design and Implementation of 1 MHz DC-DC LLC Resonant Converter with GaN Enhancement Mode HEMT

Keyphrases

• Conduction Losses 50%
• DC-DC 100%
• Digital Signal Processor 50%
• Efficiency Improvement 50%
• Enhancement-mode (E-mode) 100%
• Fast Switching 50%
• Full Load 50%
• Gallium Nitride 50%
• Gate Driver 50%
• Half-bridge LLC Resonant Converter 50%
• Half-bridge Resonant Converter 50%
• High Efficiency 50%
• High Switching Frequency 50%
• Input Voltage 50%
• Laboratory Prototype 50%
• LLC Resonant Converter 100%
• Operating Principle 50%
• Output Voltage 50%
• Power Converter 50%
• Power Density 50%
• Power Device 50%
• Power Output 50%
• Power Transistors 50%
• Rated Output 50%
• Secondary Side 50%
• Soft-switching Technique 50%
• Switching Characteristics 50%
• Switching Loss Reduction 50%
• Synchronous Rectifier 50%
• TMS320F28035 50%
• Wide Bandgap Devices 50%

Engineering

• Band Gap 33%
• Conduction Loss 33%
• Digital Signal Processor 33%
• Driver Circuit 33%
• Experimental Result 33%
• Improve Efficiency 33%
• Input Voltage 33%
• Nitride 33%
• Operating Principle 33%
• Output Power 33%
• Output Voltage 33%
• Power Converter 33%
• Power Density 33%
• Power Device 33%
• Rated Output 33%
• Resonant Converter 100%
• Secondary Side 33%
• Soft-Switching 33%
• Switching Frequency 33%
• Switching Loss 33%