TY - GEN
T1 - Design and Implementation of an Active-Clamp Forward Converter with GaN Power Device
AU - Liu, Chung Wen
AU - Liang, Tsorng Juu
AU - Liao, Kuo Fu
AU - Chen, Kai Hui
AU - Lin, Ying Jia
N1 - Funding Information:
This paper was supported by the Ministry of Science and Technology in Taiwan under project number MOST 110-3116-F-006-002-, and 110-2221-E-006-123-MY3 and Hierarchical Green-Energy Materials Research Center.
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - A dc-to-dc converter using GaN power device is proposed. Active clamped forward technique is adopted in conjunction with synchronous rectification. The implementation of a low-side active clamp forward converter shows the ability to demagnetize the transformer,thus leading to the leakage inductance energy recovery,voltage surge suppression for switching devices,zero voltage switching realization; Additionally,the conduction loss is also reduced and improve efficiency due to the output synchronous rectification circuit. Finally,implement a dc to dc converter that meets the railway system applications specifications with an input voltage of $43\sim 160 V$,a full load output of 5 V/20A,and a switching frequency of 300 kHz for a 100 W circuit in order to verify the result of proposed converter. The experimental results of GaN FET and Si MOSFET are also compared with power conversion efficiency. The experimental results reveal that the maximum efficiency is 92.15% at 60% load and the full load efficiency is 90.5%.
AB - A dc-to-dc converter using GaN power device is proposed. Active clamped forward technique is adopted in conjunction with synchronous rectification. The implementation of a low-side active clamp forward converter shows the ability to demagnetize the transformer,thus leading to the leakage inductance energy recovery,voltage surge suppression for switching devices,zero voltage switching realization; Additionally,the conduction loss is also reduced and improve efficiency due to the output synchronous rectification circuit. Finally,implement a dc to dc converter that meets the railway system applications specifications with an input voltage of $43\sim 160 V$,a full load output of 5 V/20A,and a switching frequency of 300 kHz for a 100 W circuit in order to verify the result of proposed converter. The experimental results of GaN FET and Si MOSFET are also compared with power conversion efficiency. The experimental results reveal that the maximum efficiency is 92.15% at 60% load and the full load efficiency is 90.5%.
UR - https://www.scopus.com/pages/publications/85124891344
UR - https://www.scopus.com/pages/publications/85124891344#tab=citedBy
U2 - 10.1109/IFEEC53238.2021.9661906
DO - 10.1109/IFEEC53238.2021.9661906
M3 - Conference contribution
AN - SCOPUS:85124891344
T3 - 2021 IEEE International Future Energy Electronics Conference, IFEEC 2021
BT - 2021 IEEE International Future Energy Electronics Conference, IFEEC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Future Energy Electronics Conference, IFEEC 2021
Y2 - 16 November 2021 through 19 November 2021
ER -