Design and Implementation of Input-Series/Output-Parallel 3.6 kW Half-Bridge Resonant Converter with GaN E-HEMT for High Input Voltage Applications

The enhancement mode high electron mobility transistor (GaN E-HEMTs) are suitable for high efficiency and frequency operation due to their characteristic of lower on-resistance and fast switching, respectively. However, GaN E-HEMT is with limited voltage rating and is not suitable for high voltage applications. The half-bridge resonant converter with an input side in series and output side in parallel structure causing lower power switch voltage stress and output rectifier current stress is suitable for high input voltage and high power applications. Finally, a laboratory prototype with 500 kHz resonant frequency, input voltage of 740-800 V, output voltage of 200 V and rated power of 3.6 kW is implemented. Under input voltage of 800 V, the maximum and full load efficiencies are 96.1 % at 50 % load and 92.8 %, respectively.