Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor

Wen-Chau Liu, J. Y. Chen, W. C. Wang, S. C. Feng, K. H. Yu, J. H. Yan

研究成果: Paper

1 引文 (Scopus)

摘要

An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstroms undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of emitter-base junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer and spacer simultaneously. On the other hand, theoretical consideration also shows that the potential spike is removed by inserting a δ-doping sheet between the emitter-base heterointerface.

原文English
頁面246-248
頁數3
出版狀態Published - 1999 一月 1
事件Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
持續時間: 1998 十二月 141998 十二月 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
城市Perth, WA, Aust
期間98-12-1498-12-16

指紋

Heterojunction bipolar transistors
Doping (additives)
Electric potential
Passivation
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

Liu, W-C., Chen, J. Y., Wang, W. C., Feng, S. C., Yu, K. H., & Yan, J. H. (1999). Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor. 246-248. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .
Liu, Wen-Chau ; Chen, J. Y. ; Wang, W. C. ; Feng, S. C. ; Yu, K. H. ; Yan, J. H. / Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .3 p.
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title = "Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor",
abstract = "An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstroms undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of emitter-base junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer and spacer simultaneously. On the other hand, theoretical consideration also shows that the potential spike is removed by inserting a δ-doping sheet between the emitter-base heterointerface.",
author = "Wen-Chau Liu and Chen, {J. Y.} and Wang, {W. C.} and Feng, {S. C.} and Yu, {K. H.} and Yan, {J. H.}",
year = "1999",
month = "1",
day = "1",
language = "English",
pages = "246--248",
note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

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Liu, W-C, Chen, JY, Wang, WC, Feng, SC, Yu, KH & Yan, JH 1999, 'Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor', 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, 98-12-14 - 98-12-16 頁 246-248.

Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor. / Liu, Wen-Chau; Chen, J. Y.; Wang, W. C.; Feng, S. C.; Yu, K. H.; Yan, J. H.

1999. 246-248 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .

研究成果: Paper

TY - CONF

T1 - Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor

AU - Liu, Wen-Chau

AU - Chen, J. Y.

AU - Wang, W. C.

AU - Feng, S. C.

AU - Yu, K. H.

AU - Yan, J. H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstroms undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of emitter-base junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer and spacer simultaneously. On the other hand, theoretical consideration also shows that the potential spike is removed by inserting a δ-doping sheet between the emitter-base heterointerface.

AB - An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstroms undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of emitter-base junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer and spacer simultaneously. On the other hand, theoretical consideration also shows that the potential spike is removed by inserting a δ-doping sheet between the emitter-base heterointerface.

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M3 - Paper

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Liu W-C, Chen JY, Wang WC, Feng SC, Yu KH, Yan JH. Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor. 1999. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .