摘要
AlGaInP visible lasers with depressed index cladding layers are studied theoretically and experimentally. Using the above low-refractive-index layer, we can significantly improve the characteristics of the transverse beam divergence. According to our experimental results, the transverse beam divergence can be reduced from 41.4° to 26.2°. These values also agree well with our theoretical calculations. In addition, we have optimized this structure theoretically. With a proper choice of structure parameters, we can design an AlGaInP laser diode with a transverse divergence angle as narrow as 8° while maintaining a low threshold current density.
| 原文 | English |
|---|---|
| 頁(從 - 到) | 87-90 |
| 頁數 | 4 |
| 期刊 | Solid-State Electronics |
| 卷 | 42 |
| 發行號 | 1 |
| DOIs | |
| 出版狀態 | Published - 1998 1月 30 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 凝聚態物理學
- 電氣與電子工程
- 材料化學
指紋
深入研究「Design of AlGaInP visible lasers with a low vertical divergence angle」主題。共同形成了獨特的指紋。引用此
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