Design of bidirectional and highly stable integrated hydrogenated amorphous silicon gate driver circuits

Chih Lung Lin, Chun Da Tu, Min Chin Chuang, Jian Shen Yu

研究成果: Article同行評審

66 引文 斯高帕斯(Scopus)

摘要

Based on the use of a standard five-mask process, this work presents a new integrated hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit for large size TFT-LCD applications, composed of a pull-up circuit with three TFTs, a pull-down circuit with ten TFTs, and two capacitors. The pull-up circuit, which separates the row line from the carry signal, prevents distortion of the output pulse. Moreover, the pull-down circuit with the AC-driving method can reduce the threshold voltage shift (VTH shift) to stabilize the output voltage and suppress the fluctuation of the row line, subsequently increasing the operating lifetime. According to accelerated lifetime test results, this gate driver circuit operates stably over 240 hours at 100°C. Additionally, the scan direction of the proposed circuit can be modified using two control signals and applied to the reversal display of an image.

原文English
文章編號5688130
頁(從 - 到)10-18
頁數9
期刊IEEE/OSA Journal of Display Technology
7
發行號1
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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