Design of FinFET SRAM cells using a statistical compact model

Darsen Lu, Chung Hsun Lin, Shijing Yao, Weize Xiong, Florian Bauer, Cloves R. Cleavelin, Ali M. Niknejad, Chenming Hu

研究成果: Conference contribution

14 引文 斯高帕斯(Scopus)

摘要

A study of designing FinFET-based SRAM cells using a compact model is reported. Parameters for a multi-gate FET compact model, BSIM-MG are extracted from fabricated n-type and p-type SOI FinFETs. Local mismatch in gate length and fin width is calibrated to electrical measurements of 378 FinFET SRAM cells. The cell design is re-optimized through Monte Carlo statistical simulations. Variation in readability, writability and static leakage of the cell are studied.

原文English
主出版物標題SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
出版狀態Published - 2009 十二月 1
事件SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
持續時間: 2009 九月 92009 九月 11

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

OtherSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
國家/地區United States
城市San Diego, CA
期間09-09-0909-09-11

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電腦科學應用
  • 建模與模擬

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