TY - JOUR
T1 - Design of GaN-based multicolor tunnel-junction light-emitting diodes
AU - Shih, Ya Hsuan
AU - Chang, Jih Yuan
AU - Kuo, Yen Kuang
AU - Chen, Fang Ming
AU - Huang, Man Fang
AU - Lee, Ming Lun
AU - Sheu, Jinn Kong
N1 - Funding Information:
Manuscript received September 26, 2017; accepted November 11, 2017. Date of publication November 28, 2017; date of current version December 27, 2017. This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST 105-2112-M-018-005-MY3, Contract MOST 104-2112-M-006-009-MY3, and Contract MOST 104-2221-E-218-011-MY3. The review of this paper was arranged by Editor C. Surya. (Corresponding author: Jinn-Kong Sheu.) Y.-H. Shih and J.-K. Sheu are with the Department of Photonics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan (e-mail: [email protected]).
Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST 105-2112-M-018-005-MY3, Contract MOST 104-2112-M-006-009-MY3, and Contract MOST 104-2221-E-218-011-MY3. The review of this paper was arranged by Editor C. Surya.
Publisher Copyright:
© 2017 IEEE.
PY - 2018/1
Y1 - 2018/1
N2 - The design of monolithic multicolor tunneljunction (TJ) light-emitting diodes (LEDs) are investigated numerically. This paper primarily aims to design and study monolithic TJ LED devices that possess high luminous efficiency and wide color gamut using a simple fabrication process. First, the characteristics of green and blue single LEDs are explored. Nonuniform carrier distribution inside quantum wells (QWs), which is due to the deep QWs and severe polarization effect, is observed for both single LEDs under study. Based on structural analysis of the single LEDs, streamline dual-color and broadband TJ LED structures, in which the blue unit LED has two pairs of 3-nm-thick QWs and the green unit LED has 3-nm-thick single QW, are designed and investigated. Specifically, monolithic dual-color blue/green (459/530 nm) TJ LED is proposed and analyzed using effective n+-GaN/i-In0.2 Ga0.8N/p+-GaN TJ. Furthermore, broadband TJ LED with simulated full width at half maximum of around 100 nm is achieved.
AB - The design of monolithic multicolor tunneljunction (TJ) light-emitting diodes (LEDs) are investigated numerically. This paper primarily aims to design and study monolithic TJ LED devices that possess high luminous efficiency and wide color gamut using a simple fabrication process. First, the characteristics of green and blue single LEDs are explored. Nonuniform carrier distribution inside quantum wells (QWs), which is due to the deep QWs and severe polarization effect, is observed for both single LEDs under study. Based on structural analysis of the single LEDs, streamline dual-color and broadband TJ LED structures, in which the blue unit LED has two pairs of 3-nm-thick QWs and the green unit LED has 3-nm-thick single QW, are designed and investigated. Specifically, monolithic dual-color blue/green (459/530 nm) TJ LED is proposed and analyzed using effective n+-GaN/i-In0.2 Ga0.8N/p+-GaN TJ. Furthermore, broadband TJ LED with simulated full width at half maximum of around 100 nm is achieved.
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U2 - 10.1109/TED.2017.2773660
DO - 10.1109/TED.2017.2773660
M3 - Article
AN - SCOPUS:85038396353
SN - 0018-9383
VL - 65
SP - 165
EP - 171
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
ER -