Design of gate-all-around silicon mosfets for 6-T Sram area efficiency and yield

Yi Bo Liao, Meng-Hsueh Chiang, Nattapol Damrongplasit, Wei-Chou Hsu, Tsu Jae King Liu

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Gate-all-around (GAA) MOSFETs relevant for the 11.9-nm CMOS technology node are optimized with device dimensions following the scale length rule. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for these well-tempered GAA structures. The tradeoff between read stability and write-ability of 6-T static RAM cell designs implemented with GAA MOSFETs with either square or rectangular nanowire channel regions is then investigated, and a calibrated transistor I-V compact model is used to estimate cell yield. The results indicate that a rectangular (thin and wide) channel design achieves the optimal balance between the read yield and write yield and hence provides for the lowest minimum cell operating voltage, estimated to be ~0.45 V, as well as smaller cell area.

原文English
文章編號6823112
頁(從 - 到)2371-2377
頁數7
期刊IEEE Transactions on Electron Devices
61
發行號7
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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