Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Ya Hsuan Shih, Jih Yuan Chang, Jinn-Kong Sheu, Yen Kuang Kuo, Fang Ming Chen, Ming Lun Lee, Wei-Chi Lai

研究成果: Article

10 引文 (Scopus)

摘要

The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in AlxGa1-xN-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL.

原文English
文章編號7399737
頁(從 - 到)1141-1147
頁數7
期刊IEEE Transactions on Electron Devices
63
發行號3
DOIs
出版狀態Published - 2016 三月 1

指紋

Diodes
Electrons
Light emitting diodes
Chemical analysis
Valence bands
Band structure
Ultraviolet Rays
Polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Shih, Ya Hsuan ; Chang, Jih Yuan ; Sheu, Jinn-Kong ; Kuo, Yen Kuang ; Chen, Fang Ming ; Lee, Ming Lun ; Lai, Wei-Chi. / Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes. 於: IEEE Transactions on Electron Devices. 2016 ; 卷 63, 編號 3. 頁 1141-1147.
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Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes. / Shih, Ya Hsuan; Chang, Jih Yuan; Sheu, Jinn-Kong; Kuo, Yen Kuang; Chen, Fang Ming; Lee, Ming Lun; Lai, Wei-Chi.

於: IEEE Transactions on Electron Devices, 卷 63, 編號 3, 7399737, 01.03.2016, p. 1141-1147.

研究成果: Article

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