Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Ya Hsuan Shih, Jih Yuan Chang, Jinn Kong Sheu, Yen Kuang Kuo, Fang Ming Chen, Ming Lun Lee, Wei Chih Lai

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in AlxGa1-xN-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL.

原文English
文章編號7399737
頁(從 - 到)1141-1147
頁數7
期刊IEEE Transactions on Electron Devices
63
發行號3
DOIs
出版狀態Published - 2016 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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