Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures

研究成果: Paper

1 引文 (Scopus)

摘要

We presented a systematic approach for optimizing the performance of a multiple-quantum-well eleectroabsorption surface-normal modulator using asymmetric Fabry-Perot structures. The primary requirements of these modulators are low drive voltage,high contrast ratio(CR), low insertion loss, and high speed.For specified high CR (> 20dB) requirement, maximizing Δαmax/ΔF of the material structure,where Δαmax is the maximum absorption change and ΔF is the corresponding applied electric field, or adopting RT ~ 60% of asymmetric Fabry-Perot etalon can obtain low-drivevoltage modulator. There are trade-off between the requirements of low-drive-voltage and highfrequency-response.The criterion of the optimization is to maximum Δα/ΔF2.Our theoretical model shows that wider wells give large Δαmax/ΔF2 for ASFP modulators.

原文English
DOIs
出版狀態Published - 1994 一月 1
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 1994 七月 121994 七月 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
國家Taiwan
城市Hsinchu
期間94-07-1294-07-15

指紋

Semiconductor quantum wells
Modulators
Electric potential
Insertion losses
Electric fields

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Pan, R. S., Houng, M., & Wang, Y-H. (1994). Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771295
Pan, R. S. ; Houng, Mau-phon ; Wang, Yeong-Her. / Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan.
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Pan, RS, Houng, M & Wang, Y-H 1994, 'Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures', 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan, 94-07-12 - 94-07-15. https://doi.org/10.1109/EDMS.1994.771295

Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures. / Pan, R. S.; Houng, Mau-phon; Wang, Yeong-Her.

1994. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan.

研究成果: Paper

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N2 - We presented a systematic approach for optimizing the performance of a multiple-quantum-well eleectroabsorption surface-normal modulator using asymmetric Fabry-Perot structures. The primary requirements of these modulators are low drive voltage,high contrast ratio(CR), low insertion loss, and high speed.For specified high CR (> 20dB) requirement, maximizing Δαmax/ΔF of the material structure,where Δαmax is the maximum absorption change and ΔF is the corresponding applied electric field, or adopting RT ~ 60% of asymmetric Fabry-Perot etalon can obtain low-drivevoltage modulator. There are trade-off between the requirements of low-drive-voltage and highfrequency-response.The criterion of the optimization is to maximum Δα/ΔF2.Our theoretical model shows that wider wells give large Δαmax/ΔF2 for ASFP modulators.

AB - We presented a systematic approach for optimizing the performance of a multiple-quantum-well eleectroabsorption surface-normal modulator using asymmetric Fabry-Perot structures. The primary requirements of these modulators are low drive voltage,high contrast ratio(CR), low insertion loss, and high speed.For specified high CR (> 20dB) requirement, maximizing Δαmax/ΔF of the material structure,where Δαmax is the maximum absorption change and ΔF is the corresponding applied electric field, or adopting RT ~ 60% of asymmetric Fabry-Perot etalon can obtain low-drivevoltage modulator. There are trade-off between the requirements of low-drive-voltage and highfrequency-response.The criterion of the optimization is to maximum Δα/ΔF2.Our theoretical model shows that wider wells give large Δαmax/ΔF2 for ASFP modulators.

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Pan RS, Houng M, Wang Y-H. Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures. 1994. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771295