摘要
This article presents a V-band down-converting cascode mixer fabricated in the 0.13-μm CMOS process. The mixer utilizes the cascode topology and adds a buffer to avoid loading effects. The V-band mixer exhibits a conversion gain of -1.7 dB, an input 1-dB compression point of -8 dBm at RF of 60 GHz, IF of 5 GHz, and LO power of 0 dBm. The RF-IF isolation is more than 26 dB. The LO-RF isolation is more than 15 dB. In addition to the good agreement between simulation and measurement, the proposed cascode CMOS mixer with a small chip size has a complete measured performance for further 60-GHz receiver RF front-end integration.
| 原文 | English |
|---|---|
| 頁(從 - 到) | 1973-1977 |
| 頁數 | 5 |
| 期刊 | Microwave and Optical Technology Letters |
| 卷 | 52 |
| 發行號 | 9 |
| DOIs | |
| 出版狀態 | Published - 2010 9月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 電氣與電子工程
指紋
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