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Design of V-band CMOS down-converting cascode mixer

研究成果: Article同行評審

1   !!Link opens in a new tab 引文 斯高帕斯(Scopus)

摘要

This article presents a V-band down-converting cascode mixer fabricated in the 0.13-μm CMOS process. The mixer utilizes the cascode topology and adds a buffer to avoid loading effects. The V-band mixer exhibits a conversion gain of -1.7 dB, an input 1-dB compression point of -8 dBm at RF of 60 GHz, IF of 5 GHz, and LO power of 0 dBm. The RF-IF isolation is more than 26 dB. The LO-RF isolation is more than 15 dB. In addition to the good agreement between simulation and measurement, the proposed cascode CMOS mixer with a small chip size has a complete measured performance for further 60-GHz receiver RF front-end integration.

原文English
頁(從 - 到)1973-1977
頁數5
期刊Microwave and Optical Technology Letters
52
發行號9
DOIs
出版狀態Published - 2010 9月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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