摘要
Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.
原文 | English |
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頁(從 - 到) | 1247-1250 |
頁數 | 4 |
期刊 | Physical review letters |
卷 | 65 |
發行號 | 10 |
DOIs | |
出版狀態 | Published - 1990 |
All Science Journal Classification (ASJC) codes
- 一般物理與天文學