Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice

E. Glaser, J. M. Trombetta, T. A. Kennedy, S. M. Prokes, O. J. Glembocki, K. L. Wang, C. H. Chern

研究成果: Article同行評審

45 引文 斯高帕斯(Scopus)

摘要

Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.

原文English
頁(從 - 到)1247-1250
頁數4
期刊Physical review letters
65
發行號10
DOIs
出版狀態Published - 1990

All Science Journal Classification (ASJC) codes

  • 一般物理與天文學

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