Determination of residual resist layer thickness in e-beam lithography based on energy dispersive X-ray spectrometer

Yung Chun Lee, Cheng Yu Chiu, Chuan Pu Liu, Fei Bin Hsiao, Chun Hung Chen

研究成果: Conference contribution

1 引文 (Scopus)

摘要

In this paper, we report a method for determining the residual thickness of resist layer during e-beam lithography processes. The method is based on the energy dispersive x-ray spectroscopic (EDS) measurements on a silicon substrate deposited with a PMMA layer. The PMMA layer acts as the resist layer in e-beam lithography. From a calibration test, an empirical relationship is established between the EDS signal, electron energy, and PMMA film thickness. Form this empirical relationship the residual PMMA layer thickness after e-beam exposure and developing can be determined within an accuracy of 83%, which is very important to the subsequent etching processes. An important feature of the proposed method is that its lateral resolution depends only on the focused e-beam spot size and can be in the order of nm. With such resolution, the thickness of the resist layer under few nm line width can be measured. The proposed method to estimate the residual resist layer thickness plays a vital role in nano-fabrication or nano-patterning based on e-beam lithography technology.

原文English
主出版物標題Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture
頁面43-48
頁數6
版本PART 1
出版狀態Published - 2006 十二月 1
事件2005 International Conference on Advanced Manufacture, ICAM2005 - Taipei, R.O.C., Taiwan
持續時間: 2005 十一月 282005 十二月 2

出版系列

名字Materials Science Forum
號碼PART 1
505-507
ISSN(列印)0255-5476

Other

Other2005 International Conference on Advanced Manufacture, ICAM2005
國家Taiwan
城市Taipei, R.O.C.
期間05-11-2805-12-02

指紋

X ray spectrometers
Polymethyl Methacrylate
Lithography
lithography
spectrometers
Energy dispersive spectroscopy
x rays
Nanotechnology
Linewidth
Film thickness
energy
Etching
Silicon
Calibration
X rays
Electrons
Substrates
nanofabrication
film thickness
etching

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

Lee, Y. C., Chiu, C. Y., Liu, C. P., Hsiao, F. B., & Chen, C. H. (2006). Determination of residual resist layer thickness in e-beam lithography based on energy dispersive X-ray spectrometer. 於 Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture (PART 1 編輯, 頁 43-48). (Materials Science Forum; 卷 505-507, 編號 PART 1).
Lee, Yung Chun ; Chiu, Cheng Yu ; Liu, Chuan Pu ; Hsiao, Fei Bin ; Chen, Chun Hung. / Determination of residual resist layer thickness in e-beam lithography based on energy dispersive X-ray spectrometer. Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1. 編輯 2006. 頁 43-48 (Materials Science Forum; PART 1).
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title = "Determination of residual resist layer thickness in e-beam lithography based on energy dispersive X-ray spectrometer",
abstract = "In this paper, we report a method for determining the residual thickness of resist layer during e-beam lithography processes. The method is based on the energy dispersive x-ray spectroscopic (EDS) measurements on a silicon substrate deposited with a PMMA layer. The PMMA layer acts as the resist layer in e-beam lithography. From a calibration test, an empirical relationship is established between the EDS signal, electron energy, and PMMA film thickness. Form this empirical relationship the residual PMMA layer thickness after e-beam exposure and developing can be determined within an accuracy of 83{\%}, which is very important to the subsequent etching processes. An important feature of the proposed method is that its lateral resolution depends only on the focused e-beam spot size and can be in the order of nm. With such resolution, the thickness of the resist layer under few nm line width can be measured. The proposed method to estimate the residual resist layer thickness plays a vital role in nano-fabrication or nano-patterning based on e-beam lithography technology.",
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Lee, YC, Chiu, CY, Liu, CP, Hsiao, FB & Chen, CH 2006, Determination of residual resist layer thickness in e-beam lithography based on energy dispersive X-ray spectrometer. 於 Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1 edn, Materials Science Forum, 編號 PART 1, 卷 505-507, 頁 43-48, 2005 International Conference on Advanced Manufacture, ICAM2005, Taipei, R.O.C., Taiwan, 05-11-28.

Determination of residual resist layer thickness in e-beam lithography based on energy dispersive X-ray spectrometer. / Lee, Yung Chun; Chiu, Cheng Yu; Liu, Chuan Pu; Hsiao, Fei Bin; Chen, Chun Hung.

Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1. 編輯 2006. p. 43-48 (Materials Science Forum; 卷 505-507, 編號 PART 1).

研究成果: Conference contribution

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N2 - In this paper, we report a method for determining the residual thickness of resist layer during e-beam lithography processes. The method is based on the energy dispersive x-ray spectroscopic (EDS) measurements on a silicon substrate deposited with a PMMA layer. The PMMA layer acts as the resist layer in e-beam lithography. From a calibration test, an empirical relationship is established between the EDS signal, electron energy, and PMMA film thickness. Form this empirical relationship the residual PMMA layer thickness after e-beam exposure and developing can be determined within an accuracy of 83%, which is very important to the subsequent etching processes. An important feature of the proposed method is that its lateral resolution depends only on the focused e-beam spot size and can be in the order of nm. With such resolution, the thickness of the resist layer under few nm line width can be measured. The proposed method to estimate the residual resist layer thickness plays a vital role in nano-fabrication or nano-patterning based on e-beam lithography technology.

AB - In this paper, we report a method for determining the residual thickness of resist layer during e-beam lithography processes. The method is based on the energy dispersive x-ray spectroscopic (EDS) measurements on a silicon substrate deposited with a PMMA layer. The PMMA layer acts as the resist layer in e-beam lithography. From a calibration test, an empirical relationship is established between the EDS signal, electron energy, and PMMA film thickness. Form this empirical relationship the residual PMMA layer thickness after e-beam exposure and developing can be determined within an accuracy of 83%, which is very important to the subsequent etching processes. An important feature of the proposed method is that its lateral resolution depends only on the focused e-beam spot size and can be in the order of nm. With such resolution, the thickness of the resist layer under few nm line width can be measured. The proposed method to estimate the residual resist layer thickness plays a vital role in nano-fabrication or nano-patterning based on e-beam lithography technology.

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Lee YC, Chiu CY, Liu CP, Hsiao FB, Chen CH. Determination of residual resist layer thickness in e-beam lithography based on energy dispersive X-ray spectrometer. 於 Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1 編輯 2006. p. 43-48. (Materials Science Forum; PART 1).