Determination of the valence-band offset for GaInAsSb/InP heterostructure

J. R. Chang; Y. K. Su; Y. T. Lu; D. H. Jaw; H. P. Shiao; W. Lin

doi:10.1063/1.123101

Determination of the valence-band offset for GaInAsSb/InP heterostructure

J. R. Chang, Y. K. Su, Y. T. Lu, D. H. Jaw, H. P. Shiao, W. Lin

物理學系

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4 引文斯高帕斯（Scopus）

摘要

Unstrained Ga_0.64In_0.36As_0.84Sb_0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga_0.64In_0.36As_0.84Sb_0.16/InP heterostructure.

原文	English
頁（從 - 到）	717-719
頁數	3
期刊	Applied Physics Letters
卷	74
發行號	5
DOIs	https://doi.org/10.1063/1.123101
出版狀態	Published - 1999 2月 1

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.123101

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T1 - Determination of the valence-band offset for GaInAsSb/InP heterostructure

AU - Chang, J. R.

AU - Su, Y. K.

AU - Lu, Y. T.

AU - Jaw, D. H.

AU - Shiao, H. P.

AU - Lin, W.

PY - 1999/2/1

Y1 - 1999/2/1

N2 - Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure.

AB - Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure.

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Determination of the valence-band offset for GaInAsSb/InP heterostructure

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