Determination of the valence-band offset for GaInAsSb/InP heterostructure

J. R. Chang, Y. K. Su, Y. T. Lu, D. H. Jaw, H. P. Shiao, W. Lin

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure.

原文English
頁(從 - 到)717-719
頁數3
期刊Applied Physics Letters
74
發行號5
DOIs
出版狀態Published - 1999 2月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

指紋

深入研究「Determination of the valence-band offset for GaInAsSb/InP heterostructure」主題。共同形成了獨特的指紋。

引用此