Development of EUV interference lithography for 25 nm line/space patterns

A. K. Sahoo; P. H. Chen; C. H. Lin; R. S. Liu; B. J. Lin; T. S. Kao; P. W. Chiu; T. P. Huang; W. Y. Lai; J. Wang; Y. Y. Lee; C. K. Kuan

doi:10.1016/j.mne.2023.100215

Development of EUV interference lithography for 25 nm line/space patterns

A. K. Sahoo, P. H. Chen, C. H. Lin, R. S. Liu, B. J. Lin, T. S. Kao, P. W. Chiu, T. P. Huang, W. Y. Lai, J. Wang, Y. Y. Lee, C. K. Kuan

光電科學與工程學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

原文	English
文章編號	100215
期刊	Micro and Nano Engineering
卷	20
DOIs	https://doi.org/10.1016/j.mne.2023.100215
出版狀態	Published - 2023 9月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

存取文件

10.1016/j.mne.2023.100215

其它文件與鏈接

引用此

@article{b301fed4ce3d426f8d7c9e10b38e6f4f,

title = "Development of EUV interference lithography for 25 nm line/space patterns",

abstract = "In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.",

author = "Sahoo, {A. K.} and Chen, {P. H.} and Lin, {C. H.} and Liu, {R. S.} and Lin, {B. J.} and Kao, {T. S.} and Chiu, {P. W.} and Huang, {T. P.} and Lai, {W. Y.} and J. Wang and Lee, {Y. Y.} and Kuan, {C. K.}",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors",

year = "2023",

month = sep,

doi = "10.1016/j.mne.2023.100215",

language = "English",

volume = "20",

journal = "Micro and Nano Engineering",

issn = "2590-0072",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Development of EUV interference lithography for 25 nm line/space patterns

AU - Sahoo, A. K.

AU - Chen, P. H.

AU - Lin, C. H.

AU - Liu, R. S.

AU - Lin, B. J.

AU - Kao, T. S.

AU - Chiu, P. W.

AU - Huang, T. P.

AU - Lai, W. Y.

AU - Wang, J.

AU - Lee, Y. Y.

AU - Kuan, C. K.

PY - 2023/9

Y1 - 2023/9

N2 - In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

AB - In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

UR - http://www.scopus.com/inward/record.url?scp=85163892810&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85163892810&partnerID=8YFLogxK

U2 - 10.1016/j.mne.2023.100215

DO - 10.1016/j.mne.2023.100215

M3 - Article

AN - SCOPUS:85163892810

SN - 2590-0072

VL - 20

JO - Micro and Nano Engineering

JF - Micro and Nano Engineering

M1 - 100215

ER -

Development of EUV interference lithography for 25 nm line/space patterns

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此