Development of EUV interference lithography for 25 nm line/space patterns

A. K. Sahoo; P. H. Chen; C. H. Lin; R. S. Liu; B. J. Lin; T. S. Kao; P. W. Chiu; T. P. Huang; W. Y. Lai; J. Wang; Y. Y. Lee; C. K. Kuan

doi:10.1016/j.mne.2023.100215

Development of EUV interference lithography for 25 nm line/space patterns

A. K. Sahoo
, P. H. Chen
, C. H. Lin
, R. S. Liu
, B. J. Lin
, T. S. Kao
, P. W. Chiu
, T. P. Huang
, W. Y. Lai
, J. Wang
, Y. Y. Lee
, C. K. Kuan

光電科學與工程學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

原文	English
文章編號	100215
期刊	Micro and Nano Engineering
卷	20
DOIs	https://doi.org/10.1016/j.mne.2023.100215
出版狀態	Published - 2023 9月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mne.2023.100215

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title = "Development of EUV interference lithography for 25 nm line/space patterns",

abstract = "In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.",

author = "Sahoo, \{A. K.\} and Chen, \{P. H.\} and Lin, \{C. H.\} and Liu, \{R. S.\} and Lin, \{B. J.\} and Kao, \{T. S.\} and Chiu, \{P. W.\} and Huang, \{T. P.\} and Lai, \{W. Y.\} and J. Wang and Lee, \{Y. Y.\} and Kuan, \{C. K.\}",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors",

year = "2023",

month = sep,

doi = "10.1016/j.mne.2023.100215",

language = "English",

volume = "20",

journal = "Micro and Nano Engineering",

issn = "2590-0072",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Development of EUV interference lithography for 25 nm line/space patterns

AU - Sahoo, A. K.

AU - Chen, P. H.

AU - Lin, C. H.

AU - Liu, R. S.

AU - Lin, B. J.

AU - Kao, T. S.

AU - Chiu, P. W.

AU - Huang, T. P.

AU - Lai, W. Y.

AU - Wang, J.

AU - Lee, Y. Y.

AU - Kuan, C. K.

PY - 2023/9

Y1 - 2023/9

N2 - In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

AB - In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

UR - https://www.scopus.com/pages/publications/85163892810

UR - https://www.scopus.com/pages/publications/85163892810#tab=citedBy

U2 - 10.1016/j.mne.2023.100215

DO - 10.1016/j.mne.2023.100215

M3 - Article

AN - SCOPUS:85163892810

SN - 2590-0072

VL - 20

JO - Micro and Nano Engineering

JF - Micro and Nano Engineering

M1 - 100215

ER -

Development of EUV interference lithography for 25 nm line/space patterns

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